Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252
- RS Stock No.:
- 244-1593
- Mfr. Part No.:
- IPD5N25S3430ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
SGD2,017.50
(exc. GST)
SGD2,200.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 31 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | SGD0.807 | SGD2,017.50 |
| 5000 - 5000 | SGD0.793 | SGD1,982.50 |
| 7500 - 12500 | SGD0.772 | SGD1,930.00 |
| 15000 - 27500 | SGD0.732 | SGD1,830.00 |
| 30000 + | SGD0.655 | SGD1,637.50 |
*price indicative
- RS Stock No.:
- 244-1593
- Mfr. Part No.:
- IPD5N25S3430ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
100% Avalanche tested
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