Infineon iPB Type N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263
- RS Stock No.:
- 243-9265
- Mfr. Part No.:
- IPB020N08N5ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 1000 units)*
SGD2,715.00
(exc. GST)
SGD2,959.00
(inc. GST)
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- Shipping from 26 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | SGD2.715 | SGD2,715.00 |
| 2000 - 2000 | SGD2.307 | SGD2,307.00 |
| 3000 + | SGD2.192 | SGD2,192.00 |
*price indicative
- RS Stock No.:
- 243-9265
- Mfr. Part No.:
- IPB020N08N5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon N-channel power MOSFET is an ideal for high frequency switching. It has an excellent gate charge product (FOM). It typically provided in D2PAK package system. The drain current and drain-source voltage of power MOSFET is 173 A and 80 V respec
300 W power dissipation
Surface mount
Optimized for synchronous rectification
Output capacitance reduction of up to 44 %
Related links
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