Infineon iPB N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263 IPB020N08N5ATMA1

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SGD6.11

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SGD6.66

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Units
Per unit
1 - 9SGD6.11
10 - 99SGD5.78
100 - 249SGD5.49
250 - 499SGD5.23
500 +SGD4.97

*price indicative

Packaging Options:
RS Stock No.:
243-9266
Mfr. Part No.:
IPB020N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

273A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

P

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon N-channel power MOSFET is an ideal for high frequency switching. It has an excellent gate charge product (FOM). It typically provided in D2PAK package system. The drain current and drain-source voltage of power MOSFET is 173 A and 80 V respec

300 W power dissipation

Surface mount

Optimized for synchronous rectification

Output capacitance reduction of up to 44 %

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