Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263
- RS Stock No.:
- 242-5816
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 reel of 1000 units)*
SGD4,196.00
(exc. GST)
SGD4,574.00
(inc. GST)
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In Stock
- 1,000 unit(s) ready to ship from another location
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | SGD4.196 | SGD4,196.00 |
| 2000 - 2000 | SGD4.07 | SGD4,070.00 |
| 3000 + | SGD3.948 | SGD3,948.00 |
*price indicative
- RS Stock No.:
- 242-5816
- Mfr. Part No.:
- IPB017N10N5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation
Highest system efficiency
Reduced switching and conduction losses
Related links
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- Infineon iPB Type N-Channel MOSFET 100 V N, 3-Pin TO-263 IPB048N15N5ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263