Infineon ISK Type N-Channel MOSFET, 55 A, 25 V, 6-Pin PQFN
- RS Stock No.:
- 240-6378
- Mfr. Part No.:
- ISK036N03LM5
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD1,704.00
(exc. GST)
SGD1,857.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 6,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.568 | SGD1,704.00 |
| 6000 - 6000 | SGD0.551 | SGD1,653.00 |
| 9000 - 15000 | SGD0.529 | SGD1,587.00 |
| 18000 - 33000 | SGD0.503 | SGD1,509.00 |
| 36000 + | SGD0.472 | SGD1,416.00 |
*price indicative
- RS Stock No.:
- 240-6378
- Mfr. Part No.:
- ISK036N03LM5
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | PQFN | |
| Series | ISK | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 0.81V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 171W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type PQFN | ||
Series ISK | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 0.81V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 171W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ 5 power MOSFET 30 V, 3.6 mΩ, smallest form factor in PQFN 2x2 package. With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a Best in class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications. The small 4 mm2 footprint PQFN 2x2 package, combined with outstanding electrical performance contributes towards form factor improvement in end applications, featuring low RDS on of 3.6 mΩ.
Optimized for highest performance and power density
100% avalanche tested
Superior thermal resistance for 2x2 package
N-channel
Pb-free lead plating
RoHS compliant
Halogen-free according to IEC61249-2-21
Related links
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN ISK036N03LM5
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN ISK024NE2LM5
- Infineon HEXFET Type N-Channel MOSFET -30 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 25 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET -30 V, 6-Pin PQFN IRFHS9351TRPBF
- Infineon HEXFET Type N-Channel MOSFET 25 V, 6-Pin PQFN IRFHS8242TRPBF
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin PQFN