Infineon ISK Type N-Channel MOSFET, 55 A, 25 V, 6-Pin PQFN ISK024NE2LM5

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

SGD4.88

(exc. GST)

SGD5.32

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 14,610 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5SGD0.976SGD4.88
10 - 95SGD0.87SGD4.35
100 - 245SGD0.748SGD3.74
250 - 495SGD0.678SGD3.39
500 +SGD0.562SGD2.81

*price indicative

Packaging Options:
RS Stock No.:
240-6377
Mfr. Part No.:
ISK024NE2LM5
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

25V

Series

ISK

Package Type

PQFN

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.4mΩ

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

171W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.81V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS™ 5 power MOSFET 25 V, 2.4 mΩ, smallest form factor in PQFN 2x2 package. With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a best-in-class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications. The small 4 mm2 footprint PQFN 2x2 package, combined with outstanding electrical performance contributes towards form factor improvement in end applications, featuring low RDSon of 2.4 mΩ.

Superior thermal resistance for a PQFN 2x2 package

Optimized for highest performance and power density

Industry’s lowest RDSon in smallest PQFN 2x2 package

N-channel

100% Avalanche tested

Pb-free lead plating; RoHS compliant

Related links