Infineon HEXFET Type N-Channel MOSFET, 12.5 A, 80 V PQFN
- RS Stock No.:
- 217-2639
- Mfr. Part No.:
- IRL80HS120
- Manufacturer:
- Infineon
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Subtotal (1 reel of 4000 units)*
SGD2,004.00
(exc. GST)
SGD2,184.00
(inc. GST)
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In Stock
- Plus 8,000 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | SGD0.501 | SGD2,004.00 |
| 8000 - 8000 | SGD0.482 | SGD1,928.00 |
| 12000 + | SGD0.475 | SGD1,900.00 |
*price indicative
- RS Stock No.:
- 217-2639
- Mfr. Part No.:
- IRL80HS120
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Maximum Power Dissipation Pd | 11.5W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.1mm | |
| Width | 1 mm | |
| Length | 2.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Maximum Power Dissipation Pd 11.5W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.1mm | ||
Width 1 mm | ||
Length 2.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Lowest FOM (R DS(on) x Q g/gd)
Optimized Q g, C oss, and Q rr for fast switching
Logic level compatibility
Tiny PQFN 2x2mm package
Related links
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