Vishay E N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3

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Subtotal (1 pack of 2 units)*

SGD15.28

(exc. GST)

SGD16.66

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD7.64SGD15.28
10 - 18SGD6.865SGD13.73
20 - 24SGD6.735SGD13.47
26 - 98SGD6.505SGD13.01
100 +SGD5.665SGD11.33

*price indicative

Packaging Options:
RS Stock No.:
228-2854
Mfr. Part No.:
SiHF080N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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