Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3

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Subtotal (1 pack of 2 units)*

SGD12.18

(exc. GST)

SGD13.28

(inc. GST)

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Per unit
Per Pack*
2 - 8SGD6.09SGD12.18
10 - 18SGD5.48SGD10.96
20 - 24SGD5.355SGD10.71
26 - 98SGD5.16SGD10.32
100 +SGD4.465SGD8.93

*price indicative

Packaging Options:
RS Stock No.:
228-2875
Mfr. Part No.:
SiHP080N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

227W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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