Vishay E N-Channel MOSFET, 6.4 A, 650 V Enhancement, 3-Pin TO-252 SIHD690N60E-GE3

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Subtotal (1 pack of 25 units)*

SGD51.13

(exc. GST)

SGD55.73

(inc. GST)

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Units
Per unit
Per Pack*
25 - 75SGD2.045SGD51.13
100 - 475SGD1.984SGD49.60
500 - 975SGD1.904SGD47.60
1000 - 1475SGD1.809SGD45.23
1500 +SGD1.70SGD42.50

*price indicative

RS Stock No.:
200-6829
Mfr. Part No.:
SIHD690N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6.4A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

12nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHD690N60E-GE3 is a E Series power MOSFET.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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