Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3

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Subtotal (1 pack of 5 units)*

SGD9.55

(exc. GST)

SGD10.40

(inc. GST)

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Per unit
Per Pack*
5 - 5SGD1.91SGD9.55
10 - 20SGD1.72SGD8.60
25 - 95SGD1.684SGD8.42
100 - 495SGD1.336SGD6.68
500 +SGD1.10SGD5.50

*price indicative

Packaging Options:
RS Stock No.:
228-2840
Mfr. Part No.:
SiHA5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

29W

Typical Gate Charge Qg @ Vgs

11nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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