Vishay E Type N-Channel MOSFET, 16.3 A, 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

SGD8.31

(exc. GST)

SGD9.058

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 18 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8SGD4.155SGD8.31
10 - 24SGD4.03SGD8.06
26 - 98SGD3.87SGD7.74
100 - 498SGD3.675SGD7.35
500 +SGD3.455SGD6.91

*price indicative

Packaging Options:
RS Stock No.:
228-2868
Mfr. Part No.:
SIHG21N80AEF-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16.3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

47nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links