Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 200-6867
- Mfr. Part No.:
- SIHD6N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD29.10
(exc. GST)
SGD31.725
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 11 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | SGD1.164 | SGD29.10 |
| 100 - 475 | SGD1.129 | SGD28.23 |
| 500 - 975 | SGD1.084 | SGD27.10 |
| 1000 - 1475 | SGD1.03 | SGD25.75 |
| 1500 + | SGD0.968 | SGD24.20 |
*price indicative
- RS Stock No.:
- 200-6867
- Mfr. Part No.:
- SIHD6N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-252 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 950mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 22.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-252 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 950mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 22.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHD6N80AE-GE3 is a E series power MOSFET.
Low figure-of-merit
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Related links
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