Vishay E N-Channel MOSFET, 15 A, 850 V Enhancement, 3-Pin TO-220 SiHP17N80AEF-GE3
- RS Stock No.:
- 228-2877
- Mfr. Part No.:
- SiHP17N80AEF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 228-2877
- Mfr. Part No.:
- SiHP17N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 305mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 305mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP17N80AEF-GE3
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHP6N80AE-GE3
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3
- Vishay E N-Channel Power MOSFET 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-251 SIHU6N80AE-GE3
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-252 SIHD6N80AE-GE3
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3
- Vishay E N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3