Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3

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Subtotal (1 pack of 2 units)*

SGD7.69

(exc. GST)

SGD8.382

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD3.845SGD7.69
10 - 18SGD3.465SGD6.93
20 - 24SGD3.395SGD6.79
26 - 98SGD3.285SGD6.57
100 +SGD2.845SGD5.69

*price indicative

Packaging Options:
RS Stock No.:
228-2837
Mfr. Part No.:
SIHA24N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

59nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

35W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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