Infineon CoolMOS Type N-Channel MOSFET, 37.9 A, 650 V Enhancement, 3-Pin TO-220 IPA60R099P6XKSA1

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Subtotal (1 pack of 2 units)*

SGD14.15

(exc. GST)

SGD15.424

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD7.075SGD14.15
10 - 98SGD6.475SGD12.95
100 - 248SGD5.985SGD11.97
250 - 498SGD5.545SGD11.09
500 +SGD5.40SGD10.80

*price indicative

Packaging Options:
RS Stock No.:
222-4640
Mfr. Part No.:
IPA60R099P6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

37.9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS™ P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Increased MOSFET dv/dt ruggedness

Extremely low losses due to very low FOM Rdson*Qg and Eoss

Very high commutation ruggedness

Pb-free plating Halogen free mold compound

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