Infineon CoolMOS Type N-Channel MOSFET, 31.2 A, 650 V Enhancement, 3-Pin TO-220 IPP65R110CFDAAKSA1

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Subtotal (1 pack of 2 units)*

SGD12.08

(exc. GST)

SGD13.16

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD6.04SGD12.08
10 - 98SGD5.915SGD11.83
100 - 248SGD5.795SGD11.59
250 - 498SGD5.68SGD11.36
500 +SGD5.57SGD11.14

*price indicative

Packaging Options:
RS Stock No.:
222-4707
Mfr. Part No.:
IPP65R110CFDAAKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.2A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

CoolMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

110nC

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

277.8W

Maximum Operating Temperature

150°C

Width

15.95 mm

Length

10.36mm

Height

4.57mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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