Infineon CoolMOS Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

SGD104.05

(exc. GST)

SGD113.40

(inc. GST)

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  • Plus 450 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Tube*
50 - 100SGD2.081SGD104.05
150 - 200SGD2.048SGD102.40
250 - 450SGD1.994SGD99.70
500 - 950SGD1.889SGD94.45
1000 +SGD1.69SGD84.50

*price indicative

RS Stock No.:
222-4641
Mfr. Part No.:
IPA60R180C7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Qualified for standard grade applications according to JEDEC standards

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