Infineon OptiMOS-T2 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

SGD1,377.50

(exc. GST)

SGD1,502.50

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 2500SGD0.551SGD1,377.50
5000 - 5000SGD0.528SGD1,320.00
7500 +SGD0.515SGD1,287.50

*price indicative

RS Stock No.:
218-3044
Mfr. Part No.:
IPD50N06S4L12ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

OptiMOS-T2

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel automotive MOSFET. It has DPAK (TO-252) package type.

N-channel - Enhancement mode

100% Avalanche tested

175°C operating temperature

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