Infineon OptiMOS-T2 Type N-Channel MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 IPD25N06S4L30ATMA2

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Subtotal (1 pack of 20 units)*

SGD16.98

(exc. GST)

SGD18.50

(inc. GST)

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Units
Per unit
Per Pack*
20 - 20SGD0.849SGD16.98
40 - 80SGD0.779SGD15.58
100 - 220SGD0.719SGD14.38
240 - 480SGD0.667SGD13.34
500 +SGD0.649SGD12.98

*price indicative

Packaging Options:
RS Stock No.:
215-2504
Mfr. Part No.:
IPD25N06S4L30ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS-T2

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

300mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16.3nC

Maximum Power Dissipation Pd

29W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS®-T2 Power-Transistor has 60V maximum drain source voltage, N-Ch, Automotive MOSFET, with DPAK(TO-252) package type.

N-channel - Enhancement mode

AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

Green Product (RoHS compliant)

100% Avalanche tested

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