Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1
- RS Stock No.:
- 218-3055
- Mfr. Part No.:
- IPD90N10S4L06ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
SGD23.94
(exc. GST)
SGD26.09
(inc. GST)
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In Stock
- Plus 4,830 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD2.394 | SGD23.94 |
| 20 - 90 | SGD2.322 | SGD23.22 |
| 100 - 240 | SGD2.254 | SGD22.54 |
| 250 - 490 | SGD2.186 | SGD21.86 |
| 500 + | SGD2.121 | SGD21.21 |
*price indicative
- RS Stock No.:
- 218-3055
- Mfr. Part No.:
- IPD90N10S4L06ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Related links
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- Infineon OptiMOS-T2 Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1
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