Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 IPW60R120P7XKSA1

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Subtotal (1 pack of 5 units)*

SGD34.00

(exc. GST)

SGD37.05

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD6.80SGD34.00
10 - 95SGD6.236SGD31.18
100 - 245SGD5.758SGD28.79
250 - 495SGD5.346SGD26.73
500 +SGD5.20SGD26.00

*price indicative

Packaging Options:
RS Stock No.:
217-2587
Mfr. Part No.:
IPW60R120P7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

CoolMOS P7

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

95W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

36nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.13mm

Height

41.42mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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