Infineon CoolMOS P7 Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 217-2586
- Mfr. Part No.:
- IPW60R120P7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
SGD98.79
(exc. GST)
SGD107.67
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,020 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 60 | SGD3.293 | SGD98.79 |
| 90 - 120 | SGD3.242 | SGD97.26 |
| 150 - 270 | SGD3.156 | SGD94.68 |
| 300 - 570 | SGD2.99 | SGD89.70 |
| 600 + | SGD2.675 | SGD80.25 |
*price indicative
- RS Stock No.:
- 217-2586
- Mfr. Part No.:
- IPW60R120P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.13mm | |
| Height | 41.42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.13mm | ||
Height 41.42mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IPW60R120P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPA60R360P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R024P7XKSA1