Infineon CoolMOS P7 N-Channel MOSFET, 206 A, 650 V Enhancement, 3-Pin TO-247 IPW60R045P7XKSA1
- RS Stock No.:
- 219-6023
- Mfr. Part No.:
- IPW60R045P7XKSA1
- Manufacturer:
- Infineon
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SGD12.65
(exc. GST)
SGD13.79
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | SGD12.65 |
| 10 - 99 | SGD11.59 |
| 100 - 249 | SGD10.68 |
| 250 - 499 | SGD9.94 |
| 500 + | SGD9.65 |
*price indicative
- RS Stock No.:
- 219-6023
- Mfr. Part No.:
- IPW60R045P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 206A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 201W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 21.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 206A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 201W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 21.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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