Infineon CoolMOS P7 N-Channel MOSFET & Diode, 26 A, 650 V Enhancement, 3-Pin TO-220 IPA60R120P7XKSA1
- RS Stock No.:
- 220-7367
- Mfr. Part No.:
- IPA60R120P7XKSA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 100 | SGD3.04 | SGD152.00 | - |
| 150 - 200 | SGD2.992 | SGD149.60 | 1% |
| 250 - 450 | SGD2.913 | SGD145.65 | 4% |
| 500 - 950 | SGD2.76 | SGD138.00 | 9% |
| 1000 + | SGD2.469 | SGD123.45 | 18% |
*price indicative
- RS Stock No.:
- 220-7367
- Mfr. Part No.:
- IPA60R120P7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 28W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 28W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET & Diode, 650V Maximum Drain Source Voltage, 78A Maximum Continuous Drain Current - IPA60R120P7XKSA1
This MOSFET & diode is a high-voltage power switching device designed for through-hole mounting in TO-220 packages, combining an N-channel enhancement-mode transistor with an integrated diode for use in demanding electronic power circuits. It is intended for applications that require substantial current capability and elevated temperature endurance, operating across a wide ambient temperature span.
Features and Benefits:
• 650V rating enables high-voltage switching in single device
• 78A continuous drain current supports heavy load handling
• 120mΩ low on-resistance reduces conduction losses
• 28W maximum power dissipation permits sustained power handling
• 0.9V forward diode voltage minimises diode conduction loss
• 30V gate-source limit allows standard gate drive voltages
• 78A continuous drain current supports heavy load handling
• 120mΩ low on-resistance reduces conduction losses
• 28W maximum power dissipation permits sustained power handling
• 0.9V forward diode voltage minimises diode conduction loss
• 30V gate-source limit allows standard gate drive voltages
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive switching stages
• Used with switch-mode power supplies requiring high current
• Can be used for power factor correction circuits
• Suitable for replacement in through-hole TO-220 designs
• Ideal for industrial motor drive switching stages
• Used with switch-mode power supplies requiring high current
• Can be used for power factor correction circuits
• Suitable for replacement in through-hole TO-220 designs
What thermal range can this component tolerate in operation?
It can operate from -55°C up to +150°C, enabling use in high-temperature environments.
What mounting method does it require for PCB assembly?
It is intended for through-hole mounting in a TO-220 package for secure mechanical and thermal attachment.
What channel and conduction mode does it use for switching?
The device uses an N-channel semiconductor configured in enhancement mode for standard gate-driven conduction.
Is it specified for automotive grade compliance?
It is not designated as meeting automotive standard classification.
How many pins does the package provide for electrical connection?
The package presents three pins for gate, drain and source connections.
Related links
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