Infineon OptiMOS Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 215-2536
- Mfr. Part No.:
- IPP057N06N3GXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD96.90
(exc. GST)
SGD105.60
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 350 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD1.938 | SGD96.90 |
| 150 - 200 | SGD1.907 | SGD95.35 |
| 250 - 450 | SGD1.857 | SGD92.85 |
| 500 - 950 | SGD1.759 | SGD87.95 |
| 1000 + | SGD1.574 | SGD78.70 |
*price indicative
- RS Stock No.:
- 215-2536
- Mfr. Part No.:
- IPP057N06N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 115W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 115W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
RoHS compliant - halogen free
MSL1 rated
Related links
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IPP057N06N3GXKSA1
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- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IPP80N06S209AKSA2
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP80N08S2L07AKSA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-262
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
