Infineon OptiMOS Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 857-7000
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 tube of 500 units)*
SGD3,306.50
(exc. GST)
SGD3,604.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 08 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 500 - 1000 | SGD6.613 | SGD3,306.50 |
| 1500 - 2000 | SGD6.365 | SGD3,182.50 |
| 2500 + | SGD5.967 | SGD2,983.50 |
*price indicative
- RS Stock No.:
- 857-7000
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | OptiMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Height | 15.95mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series OptiMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Height 15.95mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP80N08S2L07AKSA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IPP80N06S209AKSA2
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IPP057N06N3GXKSA1
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP100N08S2L07AKSA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220