Infineon OptiMOS Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 IPP057N06N3GXKSA1
- RS Stock No.:
- 215-2537
- Mfr. Part No.:
- IPP057N06N3GXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD39.14
(exc. GST)
SGD42.66
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 380 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD1.957 | SGD39.14 |
| 40 - 80 | SGD1.794 | SGD35.88 |
| 100 - 220 | SGD1.656 | SGD33.12 |
| 240 - 480 | SGD1.539 | SGD30.78 |
| 500 + | SGD1.496 | SGD29.92 |
*price indicative
- RS Stock No.:
- 215-2537
- Mfr. Part No.:
- IPP057N06N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 115W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Distrelec Product Id | 304-39-409 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 115W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Distrelec Product Id 304-39-409 | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Ideal for fast switching applications
RoHS compliant - halogen free
MSL1 rated
Related links
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- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP80N08S2L07AKSA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS-T2 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
