Vishay SiDR220DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR220DP-T1-RE3

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Subtotal (1 pack of 10 units)*

SGD29.83

(exc. GST)

SGD32.51

(inc. GST)

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Units
Per unit
Per Pack*
10 - 90SGD2.983SGD29.83
100 - 490SGD2.919SGD29.19
500 - 990SGD2.832SGD28.32
1000 - 1490SGD2.747SGD27.47
1500 +SGD2.664SGD26.64

*price indicative

Packaging Options:
RS Stock No.:
204-7232
Mfr. Part No.:
SIDR220DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

25V

Package Type

SO-8

Series

SiDR220DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

200nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 25 V (D-S) MOSFET has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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