Vishay SiDR140DP Type N-Channel MOSFET, 100 A, 25 V Enhancement, 8-Pin SO-8 SIDR140DP-T1-RE3
- RS Stock No.:
- 204-7236
- Mfr. Part No.:
- SIDR140DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD31.15
(exc. GST)
SGD33.95
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 14 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD3.115 | SGD31.15 |
| 100 - 490 | SGD2.833 | SGD28.33 |
| 500 - 990 | SGD2.597 | SGD25.97 |
| 1000 - 1490 | SGD2.398 | SGD23.98 |
| 1500 + | SGD2.227 | SGD22.27 |
*price indicative
- RS Stock No.:
- 204-7236
- Mfr. Part No.:
- SIDR140DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SO-8 | |
| Series | SiDR140DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.67mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Height | 0.61mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SO-8 | ||
Series SiDR140DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.67mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Height 0.61mm | ||
Automotive Standard No | ||
The Vishay N-Channel 25 V (D-S) MOSFET has a top side cooling feature provides additional venue for thermal transfer. It has optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
100 % Rg and UIS tested
TrenchFET Gen IV power MOSFET
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