Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8 SiR626ADP-T1-RE3
- RS Stock No.:
- 204-7200
- Mfr. Part No.:
- SiR626ADP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD22.52
(exc. GST)
SGD24.55
(inc. GST)
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Temporarily out of stock
- Shipping from 06 January 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD2.252 | SGD22.52 |
| 100 - 490 | SGD2.048 | SGD20.48 |
| 500 - 990 | SGD1.878 | SGD18.78 |
| 1000 - 1490 | SGD1.733 | SGD17.33 |
| 1500 + | SGD1.611 | SGD16.11 |
*price indicative
- RS Stock No.:
- 204-7200
- Mfr. Part No.:
- SiR626ADP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 165A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SiR626ADP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.75mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.26mm | |
| Height | 6.25mm | |
| Width | 1.12 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 165A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SiR626ADP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.75mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.26mm | ||
Height 6.25mm | ||
Width 1.12 mm | ||
Automotive Standard No | ||
The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.
Package Power PAK SO-8
TrenchFET Gen IV power MOSFET
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