Vishay SiHU4N80AE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3

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Subtotal (1 pack of 5 units)*

SGD11.73

(exc. GST)

SGD12.785

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD2.346SGD11.73
10 - 20SGD2.064SGD10.32
25 - 45SGD1.916SGD9.58
50 +SGD1.884SGD9.42

*price indicative

Packaging Options:
RS Stock No.:
188-4943
Mfr. Part No.:
SIHU4N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Package Type

IPAK

Series

SiHU4N80AE

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.44Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

62.5W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Height

6.22mm

Automotive Standard

No

E Series Power MOSFET

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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