Vishay E Type N-Channel MOSFET, 2.9 A, 800 V Enhancement, 3-Pin IPAK SIHU2N80AE-GE3
- RS Stock No.:
- 210-4997
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD12.21
(exc. GST)
SGD13.31
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,700 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.221 | SGD12.21 |
| 20 - 90 | SGD1.16 | SGD11.60 |
| 100 - 490 | SGD1.101 | SGD11.01 |
| 500 - 990 | SGD1.046 | SGD10.46 |
| 1000 + | SGD0.994 | SGD9.94 |
*price indicative
- RS Stock No.:
- 210-4997
- Mfr. Part No.:
- SIHU2N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.18mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.18mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has IPAK (TO-251) package type.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Related links
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay SiHD2N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 SIHD2N80AE-GE3
- Vishay SiHD2N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
- Vishay SiHU5N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK
- Vishay SiHU5N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU5N80AE-GE3
- Vishay SiHU4N80AE Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK SIHU4N80AE-GE3
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263