N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

RS Stock No.:: 541-1124
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

This image is representative of the product range

Bulk discount available

Price Each

SGD2.74

(exc. GST)

SGD2.99

(inc. GST)

9 In SG stock for delivery within 1 working day(s) when ordered before 3.30 pm.*

124 In Global stock for delivery within 4 working day(s)

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 - 9	SGD2.74
10 - 49	SGD2.69
50 - 99	SGD2.64
100 - 499	SGD2.59
500 +	SGD2.13

RS Stock No.:: 541-1124
Mfr. Part No.:: IRFBE30PBF
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	4.1 A
Maximum Drain Source Voltage	800 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	125 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	10.41mm
Width	4.7mm
Typical Gate Charge @ Vgs	78 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.01mm

N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay IRFBE30PBF

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

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