Vishay IRFBE Type N-Channel MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220 IRFBE30PBF

This image is representative of the product range

Bulk discount available
View bulk pricing option

Subtotal (1 unit)*

SGD1.78

(exc. GST)

SGD1.94

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 4 unit(s) ready to ship
  • Plus 141 unit(s) ready to ship from another location
  • Plus 1,384 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 9SGD1.78
10 - 49SGD1.74
50 - 99SGD1.71
100 - 499SGD1.67
500 +SGD1.38

*price indicative

Packaging Options:
RS Stock No.:
541-1124
Distrelec Article No.:
171-15-208
Mfr. Part No.:
IRFBE30PBF
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.1A

Maximum Drain Source Voltage Vds

800V

Series

IRFBE

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

78nC

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

9.01mm

Standards/Approvals

No

Length

10.41mm

Automotive Standard

No

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy