Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF
- RS Stock No.:
- 180-8664
- Mfr. Part No.:
- IRFBE30LPBF
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD19.38
(exc. GST)
SGD21.125
(inc. GST)
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Temporarily out of stock
- 20 unit(s) shipping from 22 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD3.876 | SGD19.38 |
| 10 - 20 | SGD3.746 | SGD18.73 |
| 25 + | SGD3.44 | SGD17.20 |
*price indicative
- RS Stock No.:
- 180-8664
- Mfr. Part No.:
- IRFBE30LPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-262 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-262 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Power MOSFET, 800V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRFBE30LPBF
This power MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control tasks in industrial environments. It operates across a wide thermal range and is suited to circuits requiring robust high-voltage handling and moderate continuous current capability in a through-hole power package.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching applications • 4.1A continuous drain current supports sustained load currents • 3Ω on-resistance reduces conduction losses in low-duty circuits • 125W power dissipation allows handling of significant power in constrained footprints • 78nC typical gate charge permits predictable switching energy budgeting • 20V gate-source limit protects gate drive selection and circuit design
Applications
• Suitable for industrial power supplies and DC-DC converters • Ideal for high-voltage motor-drive front-ends with moderate current • Used for snubber or clamp circuits in high-voltage systems • Can be used for switching elements in welding or plasma-control electronics
What temperature range can it withstand during operation?
It is specified to function from -55°C up to 150°C, enabling use in harsh thermal conditions.
What package should be considered for PCB layout and mounting?
The TO-262 package requires through-hole mounting and larger copper areas for heat dissipation.
How does the gate charge impact driver selection?
A typical gate charge of 78nC at the gate drive voltage determines the required driver current and switching losses during transitions.
Are there limitations on gate voltage application?
The maximum permissible gate-source voltage is 20V, so gate drivers and protection networks must prevent exceedance.
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