Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF
- RS Stock No.:
- 180-8664
- Mfr. Part No.:
- IRFBE30LPBF
- Manufacturer:
- Vishay
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SGD19.38
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SGD21.125
(inc. GST)
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In Stock
- Plus 20 unit(s) shipping from 13 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD3.876 | SGD19.38 |
| 10 - 20 | SGD3.746 | SGD18.73 |
| 25 + | SGD3.44 | SGD17.20 |
*price indicative
- RS Stock No.:
- 180-8664
- Mfr. Part No.:
- IRFBE30LPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-262 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-262 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Power MOSFET, 800V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRFBE30LPBF
This power MOSFET is a high-voltage N-channel switching transistor designed for power conversion and control tasks in industrial environments. It operates across a wide thermal range and is suited to circuits requiring robust high-voltage handling and moderate continuous current capability in a through-hole power package.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching applications • 4.1A continuous drain current supports sustained load currents • 3Ω on-resistance reduces conduction losses in low-duty circuits • 125W power dissipation allows handling of significant power in constrained footprints • 78nC typical gate charge permits predictable switching energy budgeting • 20V gate-source limit protects gate drive selection and circuit design
Applications
• Suitable for industrial power supplies and DC-DC converters • Ideal for high-voltage motor-drive front-ends with moderate current • Used for snubber or clamp circuits in high-voltage systems • Can be used for switching elements in welding or plasma-control electronics
What temperature range can it withstand during operation?
It is specified to function from -55°C up to 150°C, enabling use in harsh thermal conditions.
What package should be considered for PCB layout and mounting?
The TO-262 package requires through-hole mounting and larger copper areas for heat dissipation.
How does the gate charge impact driver selection?
A typical gate charge of 78nC at the gate drive voltage determines the required driver current and switching losses during transitions.
Are there limitations on gate voltage application?
The maximum permissible gate-source voltage is 20V, so gate drivers and protection networks must prevent exceedance.
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