Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin
- RS Stock No.:
- 180-8316
- Mfr. Part No.:
- IRFBE30LPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD129.20
(exc. GST)
SGD140.85
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD2.584 | SGD129.20 |
| 100 - 450 | SGD2.172 | SGD108.60 |
| 500 - 950 | SGD1.835 | SGD91.75 |
| 1000 - 1950 | SGD1.545 | SGD77.25 |
| 2000 + | SGD1.383 | SGD69.15 |
*price indicative
- RS Stock No.:
- 180-8316
- Mfr. Part No.:
- IRFBE30LPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Forward Voltage Vf | 1.8V | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Forward Voltage Vf 1.8V | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFBE30L is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having I2PAK (TO-262) and D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 3ohms at 10VGS. Maximum drain current 4.1 A.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Related links
- Vishay Single 1 Type N-Channel Power MOSFET 800 V, 3-Pin IRFBE30LPBF
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 500 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 200 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 50 V, 3-Pin TO-220AB
- Vishay Single 1 Type N-Channel Power MOSFET 60 V, 3-Pin TO-263
- Vishay Single 1 Type N-Channel Power MOSFET 100 V, 3-Pin TO-263