Vishay Single IRF620S 1 N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263 IRF620SPBF

RS Stock No.:: 180-8843
Distrelec Article No.:: 304-30-843
Mfr. Part No.:: IRF620SPBF
Manufacturer:: Vishay

Vishay Single IRF620S 1 N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263 IRF620SPBF

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Subtotal (1 pack of 5 units)*

SGD13.58

(exc. GST)

SGD14.80

(inc. GST)

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Units	Per unit	Per Pack*
5 - 5	SGD2.716	SGD13.58
10 - 20	SGD2.662	SGD13.31
25 +	SGD2.58	SGD12.90

*price indicative

RS Stock No.:: 180-8843
Distrelec Article No.:: 304-30-843
Mfr. Part No.:: IRF620SPBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	200V
	Series	IRF620S
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.8Ω
	Maximum Power Dissipation Pd	50W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	14nC
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 200V
	Series IRF620S
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.8Ω
	Maximum Power Dissipation Pd 50W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 14nC
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay IRF620S Series Power MOSFET, 200V Drain Source Voltage, 50W Maximum Power Dissipation - IRF620SPBF

This power MOSFET is a surface-mounted N-channel transistor designed for high-voltage switching and power applications. It is supplied in a TO-263 package and offers a single-transistor configuration for compact board-level solutions. The component is suitable where controlled switching and thermal resilience are required in industrial and electronic supply designs.

Features and Benefits:

• 200V drain voltage enables high-voltage switching capability
• 5.2A continuous drain current supports moderate load currents
• 50W power dissipation allows sustained power handling
• 0.8Ω drain-source resistance reduces conduction losses
• 14nC typical gate charge improves switching efficiency
• Operates from -55°C to 150°C for wide thermal range

Applications

• Suitable for 200V switching power supplies on PCBs
• Ideal for motor-drive gate switching in control circuits
• Used with PWM controllers in power-conversion designs
• Can be used for general-purpose high-voltage switching tasks
• Used in board-mounted power stage assemblies

What mounting style does it require on a PCB?

It is a surface-mount device supplied in a TO-263 package requiring appropriate soldering pads and a thermal land for heat transfer.

What gate voltage limitations must designers observe?

The gate-source rating is limited to 20V maximum and designs should prevent exceeding this during drive or transients.

How many transistor elements are present on the die?

The component contains a single element per chip, simplifying parallel/series arrangements.

Are there environmental or material standards associated with the device?

It complies with RoHS 2002/95/EC and follows IEC 61249-2-21 material guidelines for manufacturing.