Vishay Single IRF620S 1 N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263 IRF620SPBF

RS Stock No.:: 180-8301
Mfr. Part No.:: IRF620SPBF
Manufacturer:: Vishay

Vishay Single IRF620S 1 N-Channel Power MOSFET, 5.2 A, 200 V, 3-Pin TO-263 IRF620SPBF

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Subtotal (1 tube of 50 units)*

SGD93.10

(exc. GST)

SGD101.50

(inc. GST)

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Units	Per unit	Per Tube*
50 - 50	SGD1.862	SGD93.10
100 - 450	SGD1.57	SGD78.50
500 - 950	SGD1.317	SGD65.85
1000 - 1950	SGD1.11	SGD55.50
2000 +	SGD0.995	SGD49.75

*price indicative

RS Stock No.:: 180-8301
Mfr. Part No.:: IRF620SPBF
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	200V
	Series	IRF620S
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.8Ω
	Typical Gate Charge Qg @ Vgs	14nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	50W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Standards/Approvals	RoHS 2002/95/EC, IEC 61249-2-21
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 200V
	Series IRF620S
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.8Ω
	Typical Gate Charge Qg @ Vgs 14nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 50W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay IRF620S Series Power MOSFET, 200V Drain Source Voltage, 50W Maximum Power Dissipation - IRF620SPBF

This power MOSFET is a surface-mounted N-channel transistor designed for high-voltage switching and power applications. It is supplied in a TO-263 package and offers a single-transistor configuration for compact board-level solutions. The component is suitable where controlled switching and thermal resilience are required in industrial and electronic supply designs.

Features and Benefits:

• 200V drain voltage enables high-voltage switching capability
• 5.2A continuous drain current supports moderate load currents
• 50W power dissipation allows sustained power handling
• 0.8Ω drain-source resistance reduces conduction losses
• 14nC typical gate charge improves switching efficiency
• Operates from -55°C to 150°C for wide thermal range

Applications

• Suitable for 200V switching power supplies on PCBs
• Ideal for motor-drive gate switching in control circuits
• Used with PWM controllers in power-conversion designs
• Can be used for general-purpose high-voltage switching tasks
• Used in board-mounted power stage assemblies

What mounting style does it require on a PCB?

It is a surface-mount device supplied in a TO-263 package requiring appropriate soldering pads and a thermal land for heat transfer.

What gate voltage limitations must designers observe?

The gate-source rating is limited to 20V maximum and designs should prevent exceeding this during drive or transients.

How many transistor elements are present on the die?

The component contains a single element per chip, simplifying parallel/series arrangements.

Are there environmental or material standards associated with the device?

It complies with RoHS 2002/95/EC and follows IEC 61249-2-21 material guidelines for manufacturing.