Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF
- RS Stock No.:
- 180-8301
- Mfr. Part No.:
- IRF620SPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD93.10
(exc. GST)
SGD101.50
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 700 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD1.862 | SGD93.10 |
| 100 - 450 | SGD1.57 | SGD78.50 |
| 500 - 950 | SGD1.317 | SGD65.85 |
| 1000 - 1950 | SGD1.11 | SGD55.50 |
| 2000 + | SGD0.995 | SGD49.75 |
*price indicative
- RS Stock No.:
- 180-8301
- Mfr. Part No.:
- IRF620SPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.8Ω | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.8Ω | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRF620S is a N-channel power MOSFET having drain to source(Vds) voltage of 200V.The gate to source voltage(VGS) is 20V. It is having D2PAK (TO-263) package. It offers drain to source resistance (RDS.) 0.8ohms at 10VGS. Maximum drain current 5.2A.
Surface mount
Available in tape and reel
Dynamic dv/dt rating
Related links
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