Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

SGD684.00

(exc. GST)

SGD747.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 28 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +SGD0.228SGD684.00

*price indicative

RS Stock No.:
188-4911
Mfr. Part No.:
SQ1922AEEH-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

850mA

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

530mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.9nC

Forward Voltage Vf

0.8V

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

1.5W

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Width

1.35 mm

Standards/Approvals

No

Length

2.2mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.

TrenchFET® power MOSFET

Related links