Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 7 A, 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- RS Stock No.:
- 228-2946
- Mfr. Part No.:
- SQ4946CEY-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
SGD9.17
(exc. GST)
SGD10.00
(inc. GST)
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In Stock
- Plus 90 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD0.917 | SGD9.17 |
| 50 - 90 | SGD0.889 | SGD8.89 |
| 100 - 240 | SGD0.854 | SGD8.54 |
| 250 - 990 | SGD0.812 | SGD8.12 |
| 1000 + | SGD0.762 | SGD7.62 |
*price indicative
- RS Stock No.:
- 228-2946
- Mfr. Part No.:
- SQ4946CEY-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Maximum Power Dissipation Pd | 4W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Maximum Power Dissipation Pd 4W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET automotive dual N-channel is power MOSFET.
100 % Rg and UIS tested
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