Vishay Dual TrenchFET 2 N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3

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Subtotal (1 reel of 3000 units)*

SGD3,975.00

(exc. GST)

SGD4,332.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000SGD1.325SGD3,975.00
6000 - 9000SGD1.281SGD3,843.00
12000 +SGD1.196SGD3,588.00

*price indicative

RS Stock No.:
228-2940
Mfr. Part No.:
SiZF906BDT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

257A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0021Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83W

Typical Gate Charge Qg @ Vgs

25nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 30 V (D-S) MOSFET.

100 % Rg and UIS tested

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