Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

RS Stock No.:: 188-4915
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

Price Each (On a Reel of 3000)

SGD0.878

(exc. GST)

SGD0.957

(inc. GST)

Temporarily out of stock - back order for despatch 22/08/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD0.878	SGD2,634.00

**price indicative

RS Stock No.:: 188-4915
Mfr. Part No.:: SQJ208EP-T1_GE3
Manufacturer:: Vishay

Datasheet SQJ208EP-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A, 60 A
Maximum Drain Source Voltage	40 (Channel 1) V, 40 (Channel 2) V
Package Type	PowerPAK SO-8L Dual
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.3 (Channel 1) V, 2.4 (Channel 2) V
Minimum Gate Threshold Voltage	1.3 (Channel 1) V, 1.4 (Channel 2) V
Maximum Power Dissipation	27 W, 48 W
Transistor Configuration	Dual
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	2
Width	4.47mm
Typical Gate Charge @ Vgs	22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)
Maximum Operating Temperature	+175 °C
Length	5mm
Minimum Operating Temperature	-55 °C
Automotive Standard	AEC-Q101
Height	1.01mm

Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual Vishay SQJ208EP-T1_GE3

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