Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

SGD2,400.00

(exc. GST)

SGD2,610.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 +SGD0.80SGD2,400.00

*price indicative

RS Stock No.:
188-4915
Mfr. Part No.:
SQJ208EP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Forward Voltage Vf

0.77V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Height

1.01mm

Standards/Approvals

No

Length

5mm

Width

4.47 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.

TrenchFET® power MOSFET

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