Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363 SQ1922AEEH-T1_GE3
- RS Stock No.:
- 188-5029
- Mfr. Part No.:
- SQ1922AEEH-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD12.375
(exc. GST)
SGD13.50
(inc. GST)
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Temporarily out of stock
- Shipping from 25 May 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.495 | SGD12.38 |
| 50 - 75 | SGD0.446 | SGD11.15 |
| 100 - 475 | SGD0.402 | SGD10.05 |
| 500 - 975 | SGD0.361 | SGD9.03 |
| 1000 + | SGD0.324 | SGD8.10 |
*price indicative
- RS Stock No.:
- 188-5029
- Mfr. Part No.:
- SQ1922AEEH-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 850mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 530mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 850mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 530mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.
TrenchFET® power MOSFET
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