Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

RS Stock No.:: 188-5029
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

Bulk discount available

Price Each (In a Pack of 25)

SGD0.519

(exc. GST)

SGD0.566

(inc. GST)

Temporarily out of stock - back order for despatch 14/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
25 - 25	SGD0.519	SGD12.975
50 - 75	SGD0.467	SGD11.675
100 - 475	SGD0.42	SGD10.50
500 - 975	SGD0.378	SGD9.45
1000 +	SGD0.34	SGD8.50

**price indicative

RS Stock No.:: 188-5029
Mfr. Part No.:: SQ1922AEEH-T1_GE3
Manufacturer:: Vishay

Datasheet SQ1922AEEH-T1_GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	850 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	530 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	1.5 W
Maximum Gate Source Voltage	±12 V
Maximum Operating Temperature	+175 °C
Length	2.2mm
Width	1.35mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	0.9 nC @ 10 V
Height	1mm
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 850 mA, 20 V, 6-Pin SOT-363 Vishay SQ1922AEEH-T1_GE3

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