Nexperia Dual NX3020NAKS 2 Type N-Channel Trench MOSFET, 180 mA, 30 V Enhancement, 6-Pin TSSOP NX3020NAKS,115
- RS Stock No.:
- 170-5396
- Mfr. Part No.:
- NX3020NAKS,115
- Manufacturer:
- Nexperia
This image is representative of the product range
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Subtotal (1 pack of 50 units)*
SGD12.90
(exc. GST)
SGD14.05
(inc. GST)
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In Stock
- Plus 100 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | SGD0.258 | SGD12.90 |
| 250 - 450 | SGD0.213 | SGD10.65 |
| 500 - 1200 | SGD0.183 | SGD9.15 |
| 1250 - 2450 | SGD0.171 | SGD8.55 |
| 2500 + | SGD0.161 | SGD8.05 |
*price indicative
- RS Stock No.:
- 170-5396
- Mfr. Part No.:
- NX3020NAKS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | Trench MOSFET | |
| Maximum Continuous Drain Current Id | 180mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSSOP | |
| Series | NX3020NAKS | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.26nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 1.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type Trench MOSFET | ||
Maximum Continuous Drain Current Id 180mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSSOP | ||
Series NX3020NAKS | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.26nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 1.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Very fast switching
Trench MOSFET technology
ESD protection
Low threshold voltage
Target applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
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