Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

SGD2,244.00

(exc. GST)

SGD2,445.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 6000SGD0.748SGD2,244.00
9000 - 12000SGD0.72SGD2,160.00
15000 +SGD0.675SGD2,025.00

*price indicative

RS Stock No.:
165-7074
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-16V, +20V

Forward Voltage Vf

730mV

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Height

1.12mm

Width

5.26mm

Standards/Approvals

No

Length

6.25mm

Automotive Standard

No

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