Vishay TrenchFET Type N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

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Subtotal (1 tape of 5 units)*

SGD6.79

(exc. GST)

SGD7.40

(inc. GST)

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Units
Per unit
Per Tape*
5 - 45SGD1.358SGD6.79
50 - 145SGD1.324SGD6.62
150 +SGD1.224SGD6.12

*price indicative

Packaging Options:
RS Stock No.:
787-9373
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Length

6.25mm

Standards/Approvals

No

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

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