Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC SI4154DY-T1-GE3

RS Stock No.:: 180-7965
Mfr. Part No.:: SI4154DY-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC SI4154DY-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD17.46

(exc. GST)

SGD19.03

(inc. GST)

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Last RS stock

Final 3,410 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
10 - 40	SGD1.746	SGD17.46
50 - 90	SGD1.685	SGD16.85
100 - 490	SGD1.60	SGD16.00
500 - 990	SGD1.521	SGD15.21
1000 +	SGD1.446	SGD14.46

*price indicative

RS Stock No.:: 180-7965
Mfr. Part No.:: SI4154DY-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.9mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	32.5nC
	Maximum Power Dissipation Pd	5W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.9mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 32.5nC
	Maximum Power Dissipation Pd 5W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• POL

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21