Vishay TrenchFET N-Channel MOSFET, 19 A, 40 V Enhancement, 8-Pin SOIC SI4840BDY-T1-GE3

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Subtotal (1 reel of 2500 units)*

SGD2,327.50

(exc. GST)

SGD2,537.50

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 5000SGD0.931SGD2,327.50
7500 - 10000SGD0.896SGD2,240.00
12500 +SGD0.84SGD2,100.00

*price indicative

RS Stock No.:
165-2752
Mfr. Part No.:
SI4840BDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.012Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

-20V, +20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6W

Typical Gate Charge Qg @ Vgs

33nC

Maximum Operating Temperature

150°C

Length

5mm

Height

1.55mm

Standards/Approvals

RoHS, JEDEC JS709A, Halogen Free (IEC 61249-2-21)

Width

4mm

Automotive Standard

No

COO (Country of Origin):
CN

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