Vishay TrenchFET Type N-Channel MOSFET, 60 A, 30 V Enhancement, 8-Pin PowerPAK SO-8 SiRA10BDP-T1-GE3
- RS Stock No.:
- 735-112
- Mfr. Part No.:
- SiRA10BDP-T1-GE3
- Manufacturer:
- Vishay
N
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SGD1.82
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SGD1.98
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | SGD1.82 |
| 25 - 99 | SGD1.20 |
| 100 - 499 | SGD0.62 |
| 500 - 999 | SGD0.60 |
| 1000 + | SGD0.58 |
*price indicative
- RS Stock No.:
- 735-112
- Mfr. Part No.:
- SiRA10BDP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24.1nC | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Height | 1.1mm | |
| Width | 5.3mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8 | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24.1nC | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Height 1.1mm | ||
Width 5.3mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay N channel MOSFET is designed for efficient and reliable power switching in high-performance power electronics. it is fully Rg and UIS tested to ensure robustness under electrical stress and demanding operating conditions. optimized for low losses and fast switching, it supports Compact high power density designs while meeting RoHS compliant and halogen free requirements.
Offers 100 percent Rg and UIS testing for proven device reliability
Supports high power density dc/dc converter applications
Enables efficient synchronous rectification performance
Complies with RoHS standards and halogen free requirements
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