Vishay TrenchFET Type N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

SGD3,075.00

(exc. GST)

SGD3,351.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 +SGD1.025SGD3,075.00

*price indicative

RS Stock No.:
228-2915
Mfr. Part No.:
SIRA20BDP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

335A

Maximum Drain Source Voltage Vds

25V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.58mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

124nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 25 V MOSFET.

100 % Rg and UIS tested

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